![]() The major difficulties are: (i) compositional inaccuracies cause variations of the band gap, (ii) large tunneling dark currents caused by the narrow band gap (< 0.1 eV) and the small effective mass result in low specific detectivities, and (iii) high Auger recombination rates further increase the dark current. However, there have been difficulties associated with fabricating high performance MCT arrays, especially for 10 micrometers. The earlier military applications withstood the expense of less stable and convenient material such as HgxCd1-xTe mercury-cadmium telluride (MCT) alloy. ![]() Monitoring the properties of the earth both with respect to temperature (global warming) and chemically will certainly require advanced IR detectors that are suitably reliable for applications in satellites for surveillance of the earth from the space.Īll of these applications bode well for the unique niche that the novel IR semiconductor materials fill. It is quite likely that the future requirements of energy efficiency in housing and other structures and processes will make IR imaging a routine technique for discovering the potential energy leaks. This technology of thermal imaging and night-vision, based on IR radiation in the 8-14 micron atmospheric window not affected by water vapor is now becoming increasingly exploited outside the military arena : for example in see-through-smoke applications associated with fire fighting, thermal imaging of people buried in collapsed buildings, surveillance, security and bio-medical imaging etc. Infrared sources and detectors have found widespread scientific and industrial applications in mid-to-long infrared (IR) imaging systems.The principle applications of such materials in the past have been for military only - to detect and track hot objects at long range, to provide completely passive night-vision and to give assisted daytime vision when the atmospheric transmission in the visible is poor due to smoke or dust. (iii) Energy bands (a) and cut-off wavelength in InAs/GaSb SLs vs. (ii) Type II superlattice InAs/InGaSbįig.
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